2N3741A Datasheet, PDF (1/3 Pages) Microsemi Corporation – Medium Power PNP Transistors

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]
APPLICATIONS:
• Drivers
• Switches
• Medium-Power Amplifiers
FEATURES:
• Low Saturation Voltage: 0.6 V_CE(sat) @ I_C = 1.0 Amp
• High Gain Characteristics: hFE @ I_C = 250 mA: 30-100
• Excellent Safe Area Limits
• Low Collector Cutoff Current: 100 nA (Max) 2N3741A
•
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200° C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
V_CEO*
V_EB*
V_CB*
I_C*
I_C*
I_B*
T_STG*
T_J*
P_D*
θ JC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
T_C = 25° C
Derate above 25° C
Thermal Impedance
* Indicates JEDEC registered data.
MSC1042.PDF 03-12-99
2N3741A
Medium Power
PNP Transistors
TO-66
VALUE
80
7.0
80
10
4.0
2.0
-65 to 200
-65 to 200
25
0.143
7
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
°C
Watts
W/° C
° C/W