2N3719 Datasheet, PDF (1/3 Pages) Microsemi Corporation – Silicon PNP Power Transistors

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]
APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers
FEATURES:
• Collector-Emitter Sustaining Voltage:
V_CEO(SUS) = 40 Vdc (Min) - 2N3719
• DC Current Gain:
h_FE = 25-180 @ I_C = 1.0 Adc
• Low Collector-Emitter Saturation Voltage:
V_CE(sat) = 0.75 Vdc @ IC = 1.0 Adc
• High Current-Gain - Bandwidth Product:
f_T = 90 MHz (Typ)
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200°C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
V_CEO*
V_CB*
V_EB*
I_C*
I_C*
I_B*
T _STG*
T_J*
P_D*
P_D*
θ JC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
T_C = 25° C
Derate above 25° C
Total Device Dissipation
T_A = 25° C
Derate above 25° C
Thermal Resistance
Junction to Case
Junction to Ambient
* Indicates JEDEC registered Data.
MSC1026.PDF 02-24-99
2N3719
Silicon PNP
Power Transistors
TO-5
VALUE
40
40
4.0
10
3.0
0.5
-65 to 200
-65 to 200
6.0
34.3
1.0
5.71
29
175
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
°C
Watts
mW/° C
Watts
mW/° C
° C/W
° C/W