2N3634_2 Datasheet, PDF (1/5 Pages) Microsemi Corporation – PNP SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
DEVICES
2N3634
2N3634L
2N3634UB
2N3635
2N3635L
2N3635UB
2N3636
2N3636L
2N3636UB
2N3637
2N3637L
2N3637UB
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N3634* 2N3636*
2N3635* 2N3637*
Unit
Collector-Emitter Voltage
V_CEO
140
175
Vdc
Collector-Base Voltage
V_CBO
140
175
Vdc
Emitter-Base Voltage
V_EBO
5.0
5.0
Vdc
Collector Current
I_C
1.0
1.0
Adc
Total Power Dissipation
@ T_A = +25°C
1.0
W
@ T_C = +25°C
P_T **
5.0
W
UB: @ T_C = +25°C
1.5
W
Operating & Storage Junction Temperature Range T_J, T_stg
-65 to +200
°C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
2N3634, 2N3635 V_(BR)CEO 140
2N3636, 2N3637
175
Collector-Base Cutoff Current
V_CB = 100Vdc
V_CB = 140Vdc
V_CB = 175Vdc
100
2N3634, 2N3635
I_CBO
10
2N3636, 2N3637
10
Emitter-Base Cutoff Current
V_EB = 3.0Vdc
V_EB = 5.0Vdc
Collector-Emitter cutoff Current
V_CE = 100Vdc
I_EBO
50
10
I_CEO
10
Unit
Vdc
ηAdc
μAdc
μAdc
ηAdc
μAdc
μAdc
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
T4-LDS-0156 Rev. 2 (101452)
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