2N3634 Datasheet, PDF (1/2 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (PNP SILICON)

TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
V_CEO
140
175
Vdc
Collector-Base Voltage
V_CBO
140
175
Vdc
Emitter-Base Voltage
V_EBO
5.0
Vdc
Collector Current
I_C
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
@ TC = +25⁰C⁽²⁾
P_T
1.0
Adc
1.0
W
5.0
W
Operating & Storage Junction Temperature Range T_J, T_stg
-65 to +200
0_C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/⁰C for TA > +25⁰C
2) Derate linearly 28.6 mW/⁰C for TC > +25⁰C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 10 mAdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)_CEO
Collector-Base Cutoff Current
V_CB = 100 Vdc
V_CB = 140 Vdc
Emitter-Base Cutoff Current
I_CBO
2N3634, 2N3635
V_EB = 3.0 Vdc
I_EBO
V_EB = 5.0 Vdc
Collector-Emitter Cutoff Current
V_CE = 100 Vdc
I_CEO
Min.
140
175
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
Max.
Unit
Vdc
ηAdc
100
µAdc
10
ηAdc
50
µAdc
10
10
µAdc
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