2N3506 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Type 2N3506 Geometry 1506 Polarity NPN

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TECHNICAL DATA SHEET
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
DEVICES
2N3506
2N3506A
2N3506L
2N3506AL
2N3507
2N3507A
2N3507L
2N3507AL
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T_A = 25°C ⁽¹⁾
@ T_C = 25°C ⁽²⁾
Operating & Storage Temperature Range
Note:
1) Derate linearly 5.71 mW/°C for T_A > +25°C
2) Derate linearly 55.5 mW/°C for T_C > +25°C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
2N3506 2N3507
40
50
60
80
5.0
3.0
1.0
5.0
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector-Emitter Cutoff Current
V_CE = 40Vdc
V_CE = 60Vdc
Collector-Base Breakdown Voltage
I_C = 100µAdc
Emitter-Base Breakdown Voltage
I_E = 10µAdc
ON CHARACTERISTICS ⁽³⁾
Forward-Current Transfer Ratio
I_C = 500mAdc, V_CE = 1Vdc
Forward-Current Transfer Ratio
I_C = 1.5Adc, V_CE = 2Vdc
Forward-Current Transfer Ratio
I_C = 2.5Adc, V_CE = 3Vdc
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
Symbol Min. Max. Unit
V_(BR)CEO
40
50
I_CEX
V_(BR)CBO
60
80
V_(BR)EBO
5
h_FE
50
35
h_FE
40
30
h_FE
30
25
Vdc
1.0 µAdc
1.0
Vdc
Vdc
250
175
200
150
T4-LDS-0016 Rev. 1 (072040)
LEVELS
JAN
JANTX
JANTXV
TO-5 (L-Versions)
TO-39 (TO-205-AD)
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