2N3485A Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Type 2N3485A Geometry 0600 Polarity PNP

TECHNICAL DATA
PNP SILICON SMALL SIGNAL TRANSISTOR
Qualified per MIL-PRF-19500/392
Devices
2N3485A
2N3486A
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
@ TC = +25⁰C⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance Junction-to-Ambient
Junction-to-Case
1) Derate linearly 2.28 mW/⁰C above TA = +25⁰C
2) Derate linearly 11.43 mW/⁰C above TC = +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
2N3485A
2N3486A
60
60
5.0
600
0.4
2.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0_C
Symbol
R_θJA
R_θJC
Max.
0.439
87
Unit
0_mC/W
0_C/W
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
Collector-Base Cutoff Current
V(BR)_CEO
V_CB = 50 Vdc
I_CBO
V_CB = 60 Vdc
Emitter-Base Cutoff Current
V_EB = 3.5 Vdc
I_EBO
V_EB = 5.0 Vdc
Min.
60
TO-46*
(TO-206AB)
*See appendix A for
package outline
Max. Unit
Vdc
10
ηAdc
10
µAdc
50
ηAdc
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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