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| 2N3439_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
DEVICES
2N3439
2N3439L
2N3439UA
2N3440
2N3440L
2N3440UA
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
UA
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TSP = +25°C (3)
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
Top , Tstg
2N3439
2N3440
350
250
450
300
7.0
1.0
0.8
5.0
2.0
-65 to +200
1) Derate linearly @ 4.57mW/°C for TA > +25°C
2) Derate linearly @ 28.5mW/°C for TC > +25°C
3) Derate linearly @ 14mW/°C for TSP > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
RBB1 = 470Ω;VBB1 = 6V
L = 25mH (min); f = 30 â 60Hz
Collector-Emitter Cutoff Current
VCE = 300Vdc
VCE = 200Vdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc
Collector-Emitter Cutoff Current
VCE = 450Vdc, VBE = -1.5Vdc
VCE = 300Vdc, VBE = -1.5Vdc
Collector-Base Cutoff Current
VCB = 360Vdc
VCB = 250Vdc
VCB = 450Vdc
VCB = 300Vdc
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
Symbol Min.
Max.
V(BR)CEO
350
250
ICEO
2.0
2.0
IEBO
10
ICEX
5.0
5.0
2.0
ICBO
2.0
5.0
5.0
Unit
Vdc
Vdc
Vdc
Adc
W
°C
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
T4-LDS-0022 Rev. 2 (080663)
LEVELS
JAN
JANTX
JANTXV
JANS
TO-5 *
2N3439L, 2N3440L
TO-39 * (TO-205AD)
2N3439, 2N3440
UA
2N3439UA, 2N3440UA
* See Appendix A for Package
Outline
Page 1 of 2
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