2N3439 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN TRANSISTORS

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
Devices
2N3439
2N3439L
2N3440
2N3440L
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@TA = 25⁰C⁽¹⁾
@TC = 25⁰C⁽²⁾
Operating & Storage Temperature Range
1) Derate linearly 4.57 mW/⁰C for TA > +25⁰C
2) Derate linearly 28.5 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
2N3439 2N3440
350
250
450
300
7.0
1.0
0.8
5.0
-55 to +200
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 50 mAdc
2N3439
2N3440
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 300 Vdc
2N3439
I_CEO
V_CE = 200 Vdc
2N3440
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
I_EBO
Units
Vdc
Vdc
Vdc
Adc
W
W/⁰C
0_C
Min.
350
250
TO- 5*
2N3439L, 2N3440L
TO-39* (TO205-AD)
2N3439, 2N3440
*See Appendix A for
Package Outline
Max.
Unit
Vdc
2.0
µAdc
2.0
µAdc
10
µAdc
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