2N3419 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 3 Amp, 125V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]
APPLICATIONS:
• Power Supply
• Pulse Amplifier
• High Frequency Power Switching
FEATURES:
• Meets MIL-S-19500/393
• Collector-Base Voltage: up to 125V
• Peak Collector Current: 5A
• High Power Dissipation in TO-5: 15W @ T_C = 100°C
• Fast Switching
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
2N3419
3 Amp, 125V,
NPN Silicon Power
Transistors
JAN, JTX, JTXV, JANS
TO-5
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
V_CBO*
V_CEO*
V_EBO*
I_C*
I_C*
T_STG*
T_J*
P_T*
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
D.C. Collector Current
Peak Collector Current
Storage Temperature
Operating Junction Temperature
Power Dissipation
T_C = 25°C Ambient
T_C = 100°C Case
* Indicates MIL-S-19500/393
VALUE
125
80
8
3
5
-65 to 200
-65 to 200
1.0
15
UNITS
Volts
Volts
Volts
Amps
Amps
°C
°C
Watts
Watts
MSC0981A.DOC 12-02-98