2N3250A_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – PNP SILICON LOW POWER TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: [phone] Fax: [phone]
PNP SILICON
LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/323
DEVICES
2N3250A
2N3250AUB
2N3251A
2N3251AUB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T_A = +25°C ⁽¹⁾
@ T_C = +25°C ⁽¹⁾
Operating & Storage Junction Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
60
60
5.0
200
0.36
1.2
-65 to +200
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Note:
1/ Consult 19500/323 for thermal curves
Symbol
R_θJC ⁽¹⁾
Max.
150
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Symbol Min. Max.
V_(BR)CEO
60
Collector-Emitter Cutoff Voltage
V_BE = 3.0Vdc, V_CE = 40Vdc
I_CEX
20
V_BE = 3.0Vdc, V_CE = 40Vdc
T_A = 150°C
20
Collector-Base Cutoff Current
V_CB = 60Vdc
V_CB = 40Vdc
I_CBO
10
20
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
I_EBO
10
Collector-Emitter Cutoff Voltage
V_BE = 3.0Vdc, V_CE = 40Vdc
I_BEX
50
Unit
Vdc
ηAdc
μAdc
μAdc
ηAdc
μAdc
ηAdc
TO-39 (TO-205AD)
UB Package
T4-LDS-0093 Rev. 2 (101243)
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