2N3250A Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP SILICON SWITCHING TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/323
Devices
2N3250A
2N3251A
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
1) Derate linearly 2.4 W/⁰C for TA > +25⁰C
2) Derate linearly 8.0 W/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
Symbol
R_θJA(1)(2)
Value
60
60
5.0
200
0.36
1.2
-65 to +175
Units
Vdc
Vdc
Vdc
mAdc
W
W
0_C
Max.
417
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
Collector-Emitter Cutoff Voltage
V(BR)_CEO
V_BE = 3.0 Vdc, V_CE = 40 Vdc
I_CEX
Collector-Base Cutoff Current
V_CB = 60 Vdc
I_CBO
V_CB = 40 Vdc
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
Collector-Emitter Cutoff Voltage
V_BE = 3.0 Vdc, V_CE = 40 Vdc
I_CEX
Min.
60
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
20
ηAdc
10
µAdc
20
ηAdc
10
µAdc
50
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
Page 1 of 2