2N3055 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W)

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/407
Devices
2N3055
TECHNICAL DATA
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 25⁰C ⁽¹⁾
@ TC = 25⁰C ⁽²⁾
Operating & Storage Temperature Range
V_CEO
V_CBO
V_EBO
I_B
I_C
P_T
Top, T_stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R_θJC
1) Derate linearly @ 34.2 mW/⁰C for TA > +25⁰C
2) Derate linearly @ 668 mW/⁰C for TC > +25⁰C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, RBE = 100Ω
Collector-Emitter Breakdown Voltage
V_BE = -1.5 Vdc, I_C = 200 mAdc
Collector-Emitter Cutoff Current
V_CE = 60 Vdc
Collector-Emitter Cutoff Current
V_BE = -1.5 Vdc; V_CE = 100 Vdc
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
Value
70
100
7.0
7.0
15
6.0
117
-65 to +200
Max.
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
Symbol
V(BR)_CEO
V(BR)_CER
V(BR)_CEX
I_CEO
I_CEX
I_EBO
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
70
Vdc
80
Vdc
90
Vdc
1.0
mAdc
1.0
mAdc
1.0
mAdc
6 Lake Street, Lawrence, MA 01841
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120101
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