2N2907AUA Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP SMALL SIGNAL SILICON TRANSISTOR

TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/291
Devices
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C
@ TC = +25⁰C
V_CEO
V_CBO
V_EBO
I_C
P_T⁽¹⁾
P_T^{(2 / 3)}
Operating & Storage Junction Temperature Range
T_J, T_stg
1) Derate linearly 2.28 mW/⁰C for TA > +25⁰C.
2) Derate linearly 10.3 mW/⁰C for TC > +25⁰C.
3) For UA and UB surface mount case outlines: PT = 1.16 W;
derate linearly 6.6mW/⁰C for TC > +25⁰C.
All Types
60
60
5.0
600
0.4
1.8
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0_C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
V(BR)_CEO
Collector-Base Cutoff Current
V_CE = 50 Vdc
I_CBO
V_CE = 60 Vdc
Collector-Base Cutoff Current
V_CE = 50 Vdc
I_CES
Emitter-Base Cutoff Current
V_EB = 4.0 Vdc
I_EBO
V_EB = 5.0 Vdc
TO-18* (TO-206AA)
4 PIN*
2N2906AUA, 2N2907AUA
3 PIN*
2N2906AUB, 2N2907AUB
*See appendix A for package outline
Min. Max.
Unit
60
Vdc
µAdc
10
10
ηAdc
50
ηAdc
ηAdc
50
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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