2N2907ADIE Datasheet, PDF (1/2 Pages) Microsemi Corporation – SWITCHING TRANSISTOR PNP SILICON

A Microsemi Company
580 Pleasant St.
Watertown, MA 02172
2N2907ADIE
Phone: [phone]
Fax: [phone]
DIE SPECIFICATION
SWITCHING TRANSISTOR
PNP SILICON
FEATURES:
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .4V @ IC = 150 mAdc
PHYSICAL DIMENSIONS
Absolute Maximum Ratings:
Symbol Parameter
Vceo
Vcbo
Vebo
Ic
Tj, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current- Continuous
Operating Junction & Storage
Temperature Range
Limit Unit
60 Vdc
60 Vdc
5.0 Vdc
600 mAdc
-65 to +200 °C
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack)
B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Processing Options:
Standard: Capable of JANTXV applications (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
Metallization Options:
Standard: Al Top
Dash 1: Al Top
/ Au Backside (No Dash #)
/ TiPdAg Backside
ORDERING INFORMATION:
PART #: 2N2907A_ _ - _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice.
Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98
MSC0948.PDF
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