2N2880_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315
Devices
2N2880
2N3749
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T_A = 25⁰C ⁽¹⁾
@ T_C = 100⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 11.4 mW/⁰C for T_A > 25⁰C
2) Derate linearly 300 mW/⁰C for T_C > 100⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_B
I_C
P_T
T_op, T_stg
Value
80
110
8.0
0.5
5.0
2.0
30
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Symbol
R_θJC
Max.
3.33
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
Collector-Emitter Breakdown Voltage
I_C = 10 µAdc
V_(BR)CEO
V_(BR)CBO
Emitter-Base Breakdown to Voltage
I_E = 10 µAdc
V_(BR)EBO
Collector-Emitter Cutoff Current
V_CE = 60 Vdc
I_CEO
Collector-Base Cutoff Current
V_CB = 80 Vdc
I_CBO
Collector-Emitter Cutoff Current
V_CE = 110 Vdc, V_BE = -0.5
I_CEX
Emitter-Base Cutoff Current
V_EB = 6.0 Vdc
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
TO-59*
*See Appendix A for
Package Outline
Min. Max.
Unit
80
Vdc
110
Vdc
8.0
Vdc
20
µAdc
0.2
µAdc
1.0
µAdc
0.2
µAdc
111604
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