2N2609_08 Datasheet, PDF (1/1 Pages) Microsemi Corporation – P-CHANNEL J-FET

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/296
DEVICES
2N2609
LEVELS
MQ = JAN Equivalent
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
Power Dissipation⁽¹⁾
T_A = +25°C
Operating Junction & Storage Temperature Range
Symbol
V_GSS
P_D
T_op, T_stg
Value
30
300
-65 to + 200
(1) Derate linearly 1.71 mW/°C for T_A > +25°C.
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V_DS = 0, I_G = 1.0μA dc
Gate Reverse Current
V_DS = 0, V_GS = 30V dc
V_DS = 0, V_GS = 15V dc
Drain Current
V_GS = 0V dc, V_DS = 5.0V dc
Gate-Source Cutoff Voltage
V_DS = 5.0V, I_D = 1.0μA dc
Magnitude of Small-Signal, Common-Source
Short-Circuit Forward Transfer Admittance
V_GS = 0, V_DS = 5.0V dc, f = 1.0kHz
Symbol
V_(BR)GSS
Min.
30
I_GSS
I_DSS
V_GS(off)
-2.0
0.75
|Y_fs2|
2,000
Max.
30
22.5
-10.0
6.0
6,250
Small-Signal, Common-Source Short-Circuit
Input Capacitance
V_GS = 0, V_DS = 5.0V dc, f = 1.0MHz
C_iss
10
Common-Source Spot Noise Figure
V_GS = 0, V_DS = 5.0V dc, f = 1.0kHz
B_W = 16%, R_G = 1.0 megohms
NF
3.0
e_gen = 1.82mV dc, R_L = 220Ω
Unit
V
mW
°C
Unit
Vdc
ηA
mA
Vdc
μmho
pF
dB
TO-18
(TO-206AA)
T4-LDS-0003 Rev. 1 (063374)
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