2N2604_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – PNP SILICON LOW POWER TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
DEVICES
2N2604
2N2605
2N2604UB
2N2605UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C ⁽¹⁾
Operating & Storage Junction Temperature Range
Symbol 2N2604 2N2605
V_CBO
V_CEO
V_EBO
I_C
P_T
T_J, T_stg
80
70
60
6.0
30
400
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW/°C
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
Note:
1/ Consult 19500/354 for thermal curves
Symbol
R_θJA
UB
Max.
437
275
Unit
°C/mW
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Base Cutoff Current
V_CB = 80V dc
V_CB = 70V dc
V_CB = 50V dc
V_CB = 50V dc, T_A = +150°C
2N2604, UB
2N2605, UB
2N2604, 2N2605, UB
2N2604, 2N2605, UB
Symbol
I_CBO
Min.
10.0
10.0
10.0
5.0
Max.
Unit
uAdc
nAdc
uAdc
uAdc
Collector-Emitter Breakdown Current
I_C = 10mAdc
Emitter-Base Cutoff Current
V_EB = 6.0Vdc
V_EB = 5.0Vdc
Collector-Emitter Cutoff Current
V_CE = 50Vdc
V_(BR)CEO
60
I_EBO
I_CES
Vdc
10.0 uAdc
2.0 ηAdc
10 ηAdc
TO-46 (TO-206AB)
UB Package
T4-LDS-0092 Rev. 2 (101320)
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