2N2604 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP SILICON LOW POWER TRANSISTOR

TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
Devices
2N2604
2N2605
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.28 mW/⁰C above TA = +25⁰C
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_T
T_J, T_stg
2N2604 2N2605
80
70
60
6.0
30
400
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
mW/⁰C
0_C
Symbol
R_θJC
Max.
0.437
Unit
0_C/mW
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 10 µAdc
2N2604
2N2605
V_(BR)CBO
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
Emitter-Base Breakdown Current
I_E = 10 µAdc
Collector-Base Cutoff Current
V_CB = 50 Vdc
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
Collector-Emitter Cutoff Current
V_CE = 50 Vdc
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
Min.
80
70
60
6.0
TO-46*
(TO-206AB)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
10
ηAdc
2.0
ηAdc
10
ηAdc
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