2N2323 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SILICON CONTROLLED RECTIFIER

TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
Qualified
Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/
2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S
2N2329,S
Unit
Reverse Voltage
VRM
50
100
200
300
400 Vdc
Working Peak Reverse Voltage VRM
Forward Blocking Voltage VFBXM
Average Forward Current ⁽¹⁾
IO
Forward Current Surge Peak⁽²⁾ IFSM
75
50^(3/4)
150
100^(3/4)
300
200^(3/4)
0.22
15
400
300^(3/4)
500 Vpk
400⁽³⁾ Vpk
Adc
Adc
Cathode-Gate Current
VKGM
6
Vpk
Operating Temperature
Top
-65 to +125
0_C
Storage Junction Temp
Tstg
-65 to +150
0_C
1) This average forward current is for an ambient temperature of 80⁰C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5 µs after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
TO-5
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min. Max. Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R2 = 1 kµ
2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 kµ
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S,
I_RBX1
10
µAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / [phone] / Fax: [phone]
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