2N2222A Datasheet, PDF (1/2 Pages) Seme LAB – HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
JANS
JANHC
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25⁰C
2N2221A, L; 2N2222A, L ⁽¹⁾
2N2221AUA; 2N2222AUA ⁽²⁾
2N2221AUB; 2N2222AUB ⁽¹⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
1) Derate linearly 3.08 mW/⁰C above TA > +37.5⁰C
2) Derate linearly 4.76 mW/⁰C above TA > +63.5⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
Symbol
R_θJA
All Types
50
75
6.0
800
0.5
0.65
0.50
-65 to +200
Max.
325
210
325
Unit
Vdc
Vdc
Vdc
mAdc
W
0_C
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
Collector-Base Cutoff Current
V_CB= 75 Vdc
V(BR)_CEO
I_CBO
V_CB= 60 Vdc
Emitter-Base Cutoff Current
V_EB = 6.0 Vdc
I_EBO
V_EB = 4.0 Vdc
Collector-Base Cutoff Current
V_CE = 50 Vdc
I_CES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
TO-18* (TO-206AA)
2N2221A, 2N2222A
4 PIN*
2N2221AUA, 2N2222AUA
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
Min. Max.
Unit
50
Vdc
10
µAdc
10
ηAdc
10
µAdc
10
ηAdc
50
ηAdc
120101
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