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2N2219A Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH SPEED SWITCHES
TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 4.6 mW/0C above TA > +250C
2) Derate linearly 17.0 mW/0C above TC > +250C
2N2218 2N2218A; L
2N2219 2N2219A; L
30
50
60
75
5.0
6.0
800
0.8
3.0
-55 to +200
Max.
59
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IE = 10 mAdc
2N2218; 2N2219
2N2218A; L; 2N2219A; L
V(BR)CEO
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 6.0 Vdc
2N2218; 2N2219
2N2218A; L; 2N2219A; L
IEBO
VEB = 4.0 Vdc
Collector-Base Cutoff Current
All Types
VCE = 30 Vdc
VCE = 50 Vdc
2N2218; 2N2219
ICES
2N2218A; L; 2N2219A; L
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0C
TO- 39* (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
Unit
0C/W
TO-5*
2N2218AL,
2N2219AL
*See appendix A for
package outline
Min. Max.
Unit
30
Vdc
50
10
µAdc
10
ηAdc
10
10
ηAdc
10
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