2N2218_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – NPN-SWITCHING SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
NPN-SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
DEVICES
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL
* Also available in Radiation Hardened versions. See datasheet for JANSR2N2218 &
JANSR2N2219
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2218
2N2219
2N221A; L
2N2219A; L
Collector-Emitter Voltage
V_CEO
30
50
Collector-Base Voltage
V_CBO
60
75
Emitter-Base Voltage
V_EBO
5.0
6.0
Collector Current
Total Power Dissipation
@ T_A = +25°C
@ T_C = +25°C
Operating & Storage Junction Temp. Range
I_C
P_T
T_op, T_stg
800
0.8
3.0
-55 to +200
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Case
R_θJC
Note: (1) Derate linearly 4.6mW/°C above T_A > +25°C
(2) Derate linearly 17.0mW/°C above T_C > +25°C
Value
59
Unit
Vdc
Vdc
Vdc
mA
W
W
°C
Unit
°C/W
LEVELS
JAN
JANTX
JANTXV
JANS *
TO-39 (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_E = 10mAdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
V_EB = 6.0Vdc
V_EB = 4.0Vdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
All Types
Collector-Base Cutoff Current
V_CE = 30Vdc
V_CE = 50Vdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
Symbol
V_(BR)CEO
I_EBO
I_CES
Min.
30
50
Max.
10
10
10
10
10
Unit
Vdc
μAdc
ηAdc
ηAdc
TO-5
2N2218AL
2N2219AL
T4-LDS-0091 Rev. 2 (101484)
Page 1 of 4