2N2151 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]
APPLICATIONS:
• Fast Switching
• High Frequency Switching and Amplifying
FEATURES:
• High Reliability
• Greater Gain Stability
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
CHARACTERISTIC
V_CBO*
V_CEO*
V_EBO*
I_C*
I_C*
I_B*
T_STG*
T_J*
*
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Continuous Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
P_T*
T_A = 25°C
T_C = 100°C
θ JC
Thermal Resistance
Junction to Case
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
2N2151
5 Amp, 100V,
Planar, NPN
Power Transistors
JAN, JANTX
TO-59
VALUE
150
100
8
10
5
2
-65 to 200
-65 to 200
230
2
30
3.33
UNITS
V
V
V
A
A
A
°C
°C
°C
W
W
°C/W