2N2150 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277
Devices
2N2150
2N2151
TECHNICAL DATA
Qualified Level
JANTX
MAXIMUM RATINGS (T_C = 25⁰C unless otherwise noted)
Ratings
Symbol Value
Collector-Emitter Voltage
V_CEO
100
Collector-Base Voltage
V_CBO
150
Emitter-Base Voltage
V_EBO
8.0
Base Current
IB
2.0
Collector Current
I_C
2.0
Total Power Dissipation
@ T_c = +100⁰C⁽¹⁾
P_T
30
Operating & Storage Junction Temperature Range _{TJ, Tstg -65 to +200}
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.3 W/⁰C for TC > +100⁰C
R_θJC
3.3
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = +25⁰C)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 50 mAdc
Collector-Emitter Breakdown Voltage
I_C = 100 µAdc
Collector-Emitter Cutoff Current
V_CE = 80 Vdc
Collector-Base Cutoff Current
V_CB = 120 Vdc
Collector-Emitter Cutoff Current
V_CE = 120 Vdc, V_BE = -1.0 Vdc
Emitter-Base Cutoff Current
V_EB = 8.0 Vdc
Collector-Emitter Cutoff Current
V_CE = 120 Vdc, V_BE = 0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Symbol
V(BR)_CEO
V_CBO
I_CEO
I_CBO
I_CEX
I_EBO
I_CES
TO-111*
*See Appendix A for
Package Outline
Min. Max.
Unit
100
Vdc
150
Vdc
10
µAdc
5.0
µAdc
5.0
µAdc
2.0
µAdc
5.0
µAdc
120101
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