2N2060 Datasheet, PDF (1/2 Pages) Microsemi Corporation – UNITIZED DUAL NPN SILICON TRANSISTOR

TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060
2N2060L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
V_CEO
V_CBO
V_EBO
I_C
60
100
7.0
500
One
Both
Vdc
Vdc
Vdc
mAdc
Section Sections
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
P_T
540
600
mW
1.5
2.12
W
Operating & Storage Junction Temperature Range
T_J, T_stg
-65 to +200
0_C
1) Derate linearly 3.08 mW/⁰C for TA > 25⁰C for one section, 3.48 mW/⁰C for both sections
2) Derate linearly 8.6 mW/⁰C for TC > 25⁰C for one section, 12.1 mW/⁰C for both sections
ELECTRICAL CHARACTERISTICS (T_A = +25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage⁽³⁾
R_BE ≤ 10 Ω, I_C = 10 mAdc
Collector-Emitter Breakdown Voltage
I_C = 30 mAdc
Collector-Base Cutoff Current
V(BR)_CER
V(BR)_CEO
V_CB = 100 Vdc
I_CBO
V_CB = 80 Vdc
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
I_EBO
V_EB = 5.0 Vdc
Min.
80
60
TO-78*
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
10
µAdc
2.0
ηAdc
10
µAdc
2.0
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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