2N1487 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN SILICON HIGH POWER TRANSISTOR

TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
Qualified Level
2N1487
2N1488
2N1489
2N1490
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 25⁰C ⁽¹⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_CEX
V_EBO
IB
I_C
P_T
T_J, T_stg
Symbol
R_θJC
2N1487 2N1488
2N1498 2N1490
40
55
60
100
60
100
10
3.0
6.0
75
-65 to +200
Max.
2.33
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)_CEO
Collector-Emitter Breakdown Voltage
I_C = 200 µAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)_CBO
Collector-Emitter Breakdown Voltage
I_C = 0.5 mAdc, V_EB = 1.5 Vdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)_CEX
Collector-Base Cutoff Current
V_CB = 30 Vdc
I_CBO
Emitter-Base Cutoff Current
V_EB = 10 Vdc
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
TO-33*
(TO-204AA)
Unit
0_C/W
*See Appendix A for
Package Outline
Min. Max.
Unit
40
Vdc
55
60
Vdc
100
60
Vdc
100
25
µAdc
25
µAdc
120101
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