2N1483 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN SILICON MEDIUM POWER TRANSISTOR

TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
2N1483
2N1484
2N1485
2N1486
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = 25⁰C ⁽¹⁾
@ TC = 25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
1) Derate linearly 0.010 W/⁰C for TA > 25⁰C
2) Derate linearly 0.143 W/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
2N1483 2N1484
2N1485 2N1486
40
55
60
100
12
3.0
1.75
25
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
0_C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
Collector-Base Breakdown Voltage
I_C = 100 µAdc
Collector-Emitter Breakdown Voltage
V_EB = 1.5 Vdc, I_C = 0.25 mAdc
Collector-Base Cutoff Current
V_CB = 30 Vdc
V_CB = 50 Vdc
Emitter-Base Cutoff Current
V_EB = 12 Vdc
2N1483, 2N1485
2N1484, 2N1486
2N1483, 2N1485
2N1484, 2N1486
2N1483, 2N1485
2N1484, 2N1486
2N1483, 2N1485
2N1484, 2N1486
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)CEX
I_CBO
I_EBO
Min.
40
55
60
100
60
100
TO-8*
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
Vdc
15
µAdc
15
15
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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