2N1132 Datasheet, PDF (1/3 Pages) Microsemi Corporation – LOW POWER PNP SILICON TRANSISTOR

TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices
2N1131
2N1131L
2N1132
2N1132L
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
@ TC = +25⁰C⁽²⁾
Operating & Storage Temperature Range
1) Derate linearly 3.4 mW/⁰C for TA ≥ +25⁰C
2) Derate linearly 11.4 mW/⁰C for TC ≥ +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_j
All Units
40
50
5.0
600
0.6
2.0
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
W
°C
TO-39*
2N1131, 2N1132
TO-5*
ELECTRICAL CHARACTERISTICS (TA = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
V_(BR)CEO
Collector-Base Breakdown Voltage
I_C = 10 µAdc
V_(BR)CBO
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
Collector-Emitter Cutoff Current
V_CE = 50 Vdc, RBE ≤ 10 ohms
I_CER
Collector-Base Cutoff Current
V_CB = 50 Vdc
I_CBO
V_CB = 30 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
2N1311L, 2N1312L
*See appendix A for
package outline
Max.
Unit
40
Vdc
Vdc
50
100
µAdc
mAdc
10
10
µAdc
1.0
120101
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