2731-20 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz

2731-20R1
2731-20
20Watts, 36 Volts, 100us, 10%
Radar 2700-3100 MHz
GENERAL DESCRIPTION
The 2731-20is an internally matched, COMMON BASE bipolar transistor
capable of providing 20Watts of pulsed RF output power at 100 pulse width,
10% duty factor across the 2700 to 3100 MHz band. The transistor prematch
and test fixture has been optimized through the use of 10 Ohm TRL Analysis.
This ceramic sealed transistor is specifically designed for S-band radar
applications. It utilizes gold metallization and emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55KCR-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
70 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Peak Collector Current (I_c)
Maximum Temperatures
65 V
3.0 V
1.85 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
P_g
η_c
R_l
VSWR-S
VSWR-T
Power Output
Power Gain
Collector Efficiency
Return Loss
Load Mismatch Stability
Load Mismatch Tolerance
F=2700-3100 MHz
Pulse Width = 100s
Duty Factor = 10 %
Power Input = 3W
Vcc = +36V
F = 2700, 2900, 3100 MHz
MIN TYP MAX UNITS
20
W
8.2
dB
45
%
-7
dB
1.5:1
3:1
FUNCTIONAL CHARACTERISTICS @ 25°C
Ices
BV_ces
θjc¹
Collector to Emitter Leakage Vce=40V
Collector to Emitter Breakdown Ic = 10 mA
Thermal Resistance
1.5 mA
65
V
2.5 °C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.