2729-170 Datasheet, PDF (1/4 Pages) Advanced Power Technology – 170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100®, 10%

2729-170R4
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
570 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
65 V
3.0 V
17 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
P_in
P_g
η_c
VSWR
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance¹
F=2700-2900 MHz
V_cc = 38 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, P_o = 170 W
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
Iebo
BV_ces
Ices
h_FE
θjc¹
Emitter to Base Breakdown
Emitter to Base Leakage
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Veb = 1.5 V
Ic = 120 mA
Vce = 36 V
Vce = 5V, Ic = 600 mA
NOTE: 1. At rated output power and pulse conditions
MIN
170
8.2
52
TYP
8.6
60
MAX
25.7
2:1
UNITS
W
W
dB
%
3.0
V
2
mA
56 65
V
7
mA
18 50
0.30 °C/W
Issue April 2005
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