1N914 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diode

Silicon Switching Diode
Applications
1N914
or
1N914-1
DO-35 Glass Package
Used in general purpose applications, where performance and switching
speed are important.
Features
Six sigma quality
DO-35 Glass Package
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
Full approval to Mil-S-19500/116
Available up to JANTXV levels
"S" level screening available to SCDs
Maximum Ratings
Peak Inverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t_peak = 1 sec.)
Power Dissipation @ T_L=50 ^oC, L = 3/8" from body
Storage & Operating Temperature Range
Electrical Characteristics @ 25 ^oC*
Breakdown Voltage @ Ir = 0.1 mA
Symbol
PIV
Symbol
PIV
I_Avg
I_Fdc
I_peak
P_tot
T_{St & Op}
Value
100 (Min.)
75
300
0.5
250
-65 to +200
Unit
Volts
mAmps
mAmps
Amp
mWatts
o_C
Absolute Limits
100 (Min)
Unit
Volts
Reverse Leakage Current @ V_R = 20 V
I_R
Reverse Leakage (Vr =20 V, 150 ^oC)
I_R
Reverse Leakage Current @ V_R = 75 V
I_R
Capacitance @ V_R = 0 V, f = 1mHz
C_T
Reverse Recovery Time (note 1)
t_rr
Forward Recovery Time (note 2)
V_fr
0.025 (Max)
50 (Max)
5.0 (Max)
4.0 (Max)
4.0 (Max)
2.5 (Max)
Note 1: I_F = 10 mA, R_L = 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA
Note 2: I_F = 50 mA dc
*UNLESS OTHERWISE SPECIFIED
µA
µA
µA
pF
nSecs
Volts
6 Lake Street - Lawrence, MA 01841
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