1N6823 Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW LEAKAGE SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
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FAX: [phone]
1N6823
(MSASC150W100L)
Features
• Tungsten/Platinum schottky barrier
1N6823R
(MSASC150W100LR) ^{• Oxide passivated structure for very low leakage currents}
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
100 Volts
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6823) and reverse
150 Amps
polarity (strap-to-cathode: 1N6823R)
Maximum Ratings @ 25°C (unless otherwise specified)
LOW LEAKAGE
SCHOTTKY DIODE
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
derating, forward current, Tc≥ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6823
1N6823R
SYMBOL
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
MAX.
100
100
100
150
4
750
2
-65 to +150
-65 to +150
0.20
0.35
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 3
Low expansion
coef. metal (W or
Mo), Ni plated
Cu/Invar/Cu,
Ni plated
ceramic
Datasheet# MSC1028A