1N6820 Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW REVERSE LEAKAGE SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
1N6820
(MSASC75W100F)
PRELIMINA^1NR⁶⁸²Y^{0R Features}
• Tungsten schottky barrier for low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
(MSASC75W100FR)
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
100 Volts
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6820) and reverse
75 Amps
polarity (strap is cathode: 1N6820R)
LOW REVERSE
Maximum Ratings @ 25°C (unless otherwise specified)
LEAKAGE
SCHOTTKY DIODE
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
derating, forward current, Tc≥ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6820
1N6820R
V_RRM
V_RWM
V_R
I_F(ave)
dI_F/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
45
45
45
75
4
500
2
-55 to +150
-55 to +150
0.50
0.65
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 4
Datasheet# MSC1031A