1N6817 Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW REVERSE LEAKAGE SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
1N6817
(MSASC25W100K)
Features
1N6817R
• Tungsten schottky barrier
• Oxide passivated structure
(MSASC25W100KR)
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6817) and reverse
100 Volts
25 Amps
polarity (strap is cathode: 1N6817R)
• TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)
LOW REVERSE
screening i.a.w. Microsemi internal procedure PS11.50 available
LEAKAGE
Maximum Ratings @ 25°C (unless otherwise specified)
SCHOTTKY DIODE
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6817
1N6817R
SYMBOL
VRRM
VRWM
VR
I_F(ave)
dIF/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
MAX.
100
100
100
25
(3.3)
120
2
-55 to +175
-55 to +175
1.25
1.35
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Datasheet# MSC1034B August, 2000
Mechanical Outline
ThinKey™2