1N6815 Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW VOLTAGE DROP SCHOTTKY DIODE

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]
1N6815
(MSASC25H45K)
Features
• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6815) and reverse
polarity (strap is cathode: 1N6815R)
• TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening
i.a.w. Microsemi Internal Procedure PS11.50 available
1N6815R
(MSASC25H45KR)
45 Volts
25 Amps
LOW VOLTAGE
DROP SCHOTTKY
DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6815
1N6815R
V_RRM
V_RWM
V_R
I_F(ave)
dIF/dT
I_FSM
I_RRM
T_j
T_stg
θ_JC
45
45
45
25
(3.3)
125
2
-55 to +150
-55 to +150
1.25
1.35
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Datasheet# MSC1458A August, 2000
Mechanical Outline
ThinKey™2