1N6774 Datasheet, PDF (1/1 Pages) Microsemi Corporation – ULTRAFAST SILICON POWER RECTIFIER

TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/646
Devices
1N6774
1N6775
1N6776
1N6777
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Working Peak Reverse Voltage
Forward Current
TC = +100°C⁽¹⁾
Forward Current Surge Peak TP = 8.3⁰C
Operating & Storage Junction Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1) Derate at 300 mA/⁰C above TC = +100⁰C
Symbol 1N6774
V_RWM
50
I_F
I_FSM
T_op, T_stg
1N6775 1N6776
100 150
15
180
-65 to +150
1N6777
200
Unit
Vdc
Adc
Apk
0_C
Symbol
R_θJC
R_θJA
Max.
2.0
40
Unit
0_C/W
0_C/W
ELECTRICAL CHARACTERISTICS (T_C = +25⁰C Unless Otherwise Noted)
outline
Characteristics
Symbol
Forward Voltage
I_F = 8.0 Adc, pulsed
VF
I_F = 15 Adc, pulsed
Reverse Current Leakage
VR = 0.8 of VRWM
IR
Thermal Impedance
I_M =15 mAdc; I_H = 9.9 Adc; ^tH = 200 ms; ^tMD = 35 µs; VH = 1
Vdc
Z_ØJX
Breakdown Voltage
IR = 10 µAdc
1N6774
1N6775
V_BR
1N6776
1N6777
Junction Capacitance
VR = 5.0 Vdc, f = 1.0 MHz
CJ
Reverse Recovery Time
IF = 1.0 Adc; di/dt = 50 A/µs
t_rr
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
50
100
150
200
TO-257*
(2-PIN-ISOLATED)
*See appendix A for
package
Max. Unit
1.00
Vdc
1.15
10
µAdc
0_C/W
1.8
Vdc
300
pF
35
ηs
120101
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