1N6705 Datasheet, PDF (1/2 Pages) Microsemi Corporation – ULTRAFAST RECTIFIER

2830 S. Fairview St.
Santa Ana, CA 92704
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FAX: [phone]
1N6705
1N6705R
PRELIMINARY ^Features
• passivated mesa structure for very low leakage currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed surface mount power package
400 Volts
20 Amps
• Low package inductance
35 ns
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6705) and reverse
polarity (strap-to-cathode: 1N6705R)
ULTRAFAST
RECTIFIER
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
SYMBOL
V_RRM
V_RWM
V_R
I_F(ave)
I_FSM
T_j
T_stg
θ_JC
MAX.
400
400
400
20
100
-65 to +175
-65 to +175
2.0 (typ. 1.6)
UNIT
Volts
Volts
Volts
Amps
Amps
°C
°C
°C/W
Mechanical Outline
G-BODY (DO-217AA)
Datasheet# MSC0862