1N6638U Datasheet, PDF (1/2 Pages) Compensated Deuices Incorporated – SWITCHING DIODES

• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I_FSM = 2.5A, half sine wave, Pw = 8.3ms
1N6638U & US
1N6642U & US
1N6643U & US
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
TYPES
V _BR
@ IR
=100 µA
1N6638U & US
1N6642U & US
1N6643U & US
V (pk)
150
100
75
V _RWM
V (pk)
125
75
50
V _F1
IFM
=10 mA
(Pulsed)
V dc
0.8
0.8
1.0
V _{F2 @} I _F2
(Pulsed)
V dc
mA
1.1
200
1.2
100
1.2
100
tfr
IF
=50 mA
ns
20
20
20
trr
IR = 10 mA
IF = 10 mA
IREC = 1 mA
ns
4.5
5.0
6.0
TYPES
1N6638U & US
1N6642U & US
1N6643U & US
I _R1
VR
= 20 V
nA dc
35
25
50
I _R2
I _R3
I _R4
C _T1
@V R
= V _RWM
µA dc
V _R = 20 V V _R = V _RWM
TA = 150°C TA = 150°C
µA dc
µA dc
VR=
0V
pF
0.5
50
0.5
50
0.5
75
100
2.5
100
5.0
160
5.0
C _T2
VR=
1.5V
pF
2.0
2.8
2.8
MILLIMETERS
DIM MIN MAX
D 1.78 2.16
F 0.48 0.71
G 4.19 4.95
S
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
T₅₀HE_°R_CM_/WAL_mR_axE_imSI_uS_mTA_aN_{t L}CE₌:₀(ROJEC):
THERMAL IMPEDANCE:
°C/W maximum
(ZOJX):
25
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE [phone]
FAX [phone]
WEBSITE: http://www.microsemi.com
157