1N6626_04 Datasheet, PDF (1/4 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
APPEARANCE
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N6626 to 1N6631 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
• Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6626, MSP6629, etc.
• Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate
data sheet for 1N6626US thru 1N6631US)
• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +175^oC
• Storage Temperature: -65^oC to +175^oC
• Peak Forward Surge Current @ 25^oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
• Average Rectified Forward Current (I_O) at T_L= +75^oC
(L=.375 inch from body):
1N6626 thru 1N6628
4.0A
1N6629 thru 1N6630
3.0A
1N6631
2.5A
(Derate linearly at 1.0%/^oC for T_L> +75^oC)
• Average Rectified Forward Current (I_O) at T_A=25^oC:
1N6626 thru 1N6628
2.0A
1N6629 thru 1N6631
1.4A
(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O rating
is typical for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where
T_J(max) is not exceeded.)
• Thermal Resistance L= 0.375 inch (R_θJL): 22^oC/W
• Capacitance at V_R= 10 V: 40 pF
• Solder temperature: 260^oC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper except for JANS with solid
Silver (Ag) and no finish
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 750 mg
• See package dimensions on last page
Copyright  2004
11-01-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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