1N6620US_09 Datasheet, PDF (1/4 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
Package “A”
or D-5A
FEATURES
• Surface mount series equivalent to the JEDEC
registered 1N6620 to 1N6625 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
• Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6620US, SP6624US, etc.
• Axial-leaded equivalents also available (see separate
data sheet for 1N6620 thru 1N6625)
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +150^oC
• Storage Temperature: -65^oC to +175^oC
• Peak Forward Surge Current @ 25^oC: 20 Amps (except
1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
• Average Rectified Forward Current (I_O) at T_EC=+110^oC:
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 1.5%/^oC for T_EC > +110^oC)
• Average Rectified Forward Current (I_O) at T_A=25^oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where T_J(max) is not exceeded.)
• Thermal Resistance junction to endcap (R_θJEC): 13^oC/W
• Capacitance at V_R= 10 V: 10 pF
• Solder temperature: 260^oC for 10 s (maximum)
APPLICATIONS / BENEFITS
• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead plating.
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-481-B
• Weight: 193 mg
• See package dimensions and recommended pad
layout on last page
Copyright © 2009
10-06-2009 REV E; SD52A.pdf
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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