1N6510_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

SCOTTSDALE DIVISION
1N6510
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them either to the positive side of the power supply line or to ground (see figure 1). An
external TVS diode may be added between the positive supply line and ground to
prevent over-voltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding
or encoding applications. These arrays offer many advantages of integrated circuits
such as high-density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
16-PIN Ceramic
Flat Pack
FEATURES
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage V_BR > 75 V at 5 µA
• Low Leakage I_R< 100nA at 40 V
• Low Capacitance C_t < 4.0 pF
• Switching Speeds less than 10 ns
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6510 for a JANTX screen.
MAXIMUM RATINGS
• Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
• Continuous Forward Current of 300 mA dc (Note 1 & 3)
• Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
• 400 mW Power Dissipation per Junction @ 25^oC
• 500 mW Power Dissipation per Package @ 25^oC (Note 4)
• Operating Junction Temperature range –65 to +150^oC
• Storage Temperature range of –65 to +200^oC
NOTE 1: Each Diode
NOTE 2: Pulsed: P_W = 100 ms max.; duty cycle <20%
NOTE 3: Derate at 2.4 mA/^oC above +25^oC
NOTE 4: Derate at 4.0 mW/^oC above +25^oC
APPLICATIONS / BENEFITS
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (See Circuit in Figure
1)
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
MECHANICAL AND PACKAGING
• 16-PIN Ceramic Flat Pack
• Weight 0.5 grams (approximate)
• Marking: Logo, part number, date code and dot
identifying pin #1
• Carrier Tubes; 19 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
REVERSE
CURRENT
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
PART
NUMBER
V_F1
I_F = 100 mA
(Note 1)
V
I_R1
V_R = 40 V
µA
I_R2
V_R = 20 V
nA
C_t
V_R = 0 V;
F = 1 MHz
pF
1N6510
1
0.1
25
4.0
NOTE 1: Pulsed: P_W = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
MAXIMUM
FORWARD
RECOVERY
TIME
t_fr
I_F = 100 mA
ns
15
MAXIMUM
REVERSE
RECOVERY TIME
t_rr @
I_F = I_R = 10 mA
i_rr = 1 mA
R_L = 100 ohms
ns
10
Copyright  2003
5-03-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
MAXIMUM
FORWARD
VOLTAGE
MATCH
V_F5
I_F= 10 mA
mV
5
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