1N6507_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

SCOTTSDALE DIVISION
1N6507
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
DESCRIPTION
These low capacitance diode arrays with common anode are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 10-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them to ground (see figure 1). This circuit application is further complimented by the
1N6506 (separate data sheet) that has a common cathode. An external TVS diode
may be added between the positive supply line and ground to prevent overvoltage on
the supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
14-PIN Ceramic DIP
FEATURES
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage V_BR > 60 V at 10 μA
• Low Leakage I_R< 100nA at 40 V
• Low Capacitance C < 8.0 pF
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6507 for a JANTX screen.
MAXIMUM RATINGS
• V_BR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
• I_O Continuous Forward Current of 300 mA (Notes 1 & 3)
• I_FSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
• 400 mW Power Dissipation per Junction @ 25^oC
• 600 mW Power Dissipation per Package @ 25^oC (Note 4)
• Operating Junction Temperature range –65 to +150^oC
• Storage Temperature range of –65 to +200^oC
NOTE 1: Each Diode
NOTE 2: Pulsed: P_W = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/^oC above +25^oC
NOTE 4: Derate at 4.0 mW/^oC above +25^oC
APPLICATIONS / BENEFITS
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
MECHANICAL AND PACKAGING
• 14-PIN Ceramic DIP
• Weight 2.05 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of package
• Carrier Tubes; 25 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified
PART
NUMBER
1N6507
MAXIMUM
FORWARD
VOLTAGE
V_F1
I_F = 100 mA
(Note 1)
V
1
MAXIMUM
FORWARD
VOLTAGE
V_F2
I_F = 500 mA
(Note 1)
V
1.5
MAXIMUM
REVERSE
CURRENT
I_R1
V_R = 40 V
μA
0.1
MAXIMUM
CAPACITANCE
(PIN TO PIN)
C_t
V_R = 0 V
F = 1 MHz
pF
8.0
MAXIMUM
FORWARD
RECOVERY TIME
t_fr
I_F = 500 mA
ns
40
MAXIMUM
REVERSE
RECOVERY TIME
trr
I_F = I_R = 200 mA
i_rr = 20 mA
R_L = 100 ohms
ns
20
NOTE 1: Pulsed: P_W = 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2006
01-24-2006 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
Page 1