1N6506_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

SCOTTSDALE DIVISION
1N6506
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
DESCRIPTION
APPEARANCE
These low capacitance diode arrays with common cathode are multiple, discrete,
isolated junctions fabricated by a planar process and mounted in a 10-PIN package for
use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by
directing them to the positive side of the power supply line (see figure 1). This circuit
application is further complimented by the 1N6507 (separate data sheet) that has a
common anode. An external TVS diode may be added between the positive supply
line and ground to prevent overvoltage on the supply rail. They may also be used in
fast switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as
well as decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability. This is a
result of fewer pick and place operations, smaller footprint, smaller weight, and
elimination of various discrete packages that may not be as user friendly in PC board
mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
14-PIN Ceramic DIP
FEATURES
APPLICATIONS / BENEFITS
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage V_BR > 60 V at 10 μA
• Low Leakage I_R< 100nA at 40 V
• Low Capacitance C < 4.0 pF
• Switching Speeds less than 20 ns
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6506 for a JANTX screen.
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• V_BR Reverse Breakdown Voltage 60 V min (Note 1 & 2)
• I_O Continuous Forward Current of 300 mA (Note 1 & 3)
• I_FSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
• 400 mW Power Dissipation per Junction @ 25^oC
• 600 mW Power Dissipation per Package @ 25^oC (Note 4)
• Operating Junction Temperature range –65 to +150^oC
• Storage Temperature range of –65 to +200^oC
• 14-PIN Ceramic DIP
• Weight 2.05 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of package
• Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: P_W = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/^oC above +25^oC
NOTE 4: Derate at 4.0 mW/^oC above +25^oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified
PART
NUMBER
1N6506
MAXIMUM
FORWARD
VOLTAGE
V_F1
I_F = 100 mA
(Note 1)
V
1
MAXIMUM
FORWARD
VOLTAGE
V_F2
I_F = 500 mA
(Note 1)
V
1.5
MAXIMUM
REVERSE
CURRENT
I_R1
V_R = 40 V
μA
0.1
MAXIMUM
CAPACITANCE
(PIN TO PIN)
C_t
V_R = 0 V
F = 1 MHz
pF
4.0
MAXIMUM
FORWARD
RECOVERY TIME
t_fr
I_F = 500 mA
ns
40
MAXIMUM
REVERSE
RECOVERY TIME
trr
I_F = I_R = 200 mA
i_rr = 20 mA
R_L = 100 ohms
ns
20
NOTE 1: Pulsed: P_W = 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2006
5-1-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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