1N647UR-1 Datasheet, PDF (1/1 Pages) Microsemi Corporation – SILICON RECTIFIER

1N647UR-1
FEATURES
• 1N647UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
• HERMETICALLY SEALED
• DOUBLE PLUG CONSTRUCTION
• ALSO AVAILABLE AS LL647, & MLL647
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 8.3mS:
Total Power Dissipation:
Operating Current:
Operating Current:
Derating Factor:
Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C
-65°C to +175°C
5.0A
500mW
400mA, T_A= +25°C
150mA, T_A= +150°C
2mA/°C above +25°C
6mA/°C above +150°C
400V
DESIGN DATA
Case: Hermetically sealed glass package per MIL-
PRF-19500/240 DO-213AA outline
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
Thermal Resistance (R_θJEC): 100°C/W maximum
Thermal Impedance (Z_θJX): 35°C/W maximum
Marking: Blue body coat
Polarity: Cathode end is banded
DC ELECTRICAL CHARACTERISTICS
V_F
I_R
Ambient
I_F
(°C)
mA
Min Max Ambient
V_R
Min
V
V
(°C)
V (dc) µA
25 400 0.80 1.00 25
400 -
150 400 0.70 0.95 25 480(ac) -
-55 400
- 1.20 150
400 -
Max
µA
0.050
50
25
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol Min Max
Capacitance @ V_R = 4V
pF
-
20
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