1N5807CBUS Datasheet, PDF (1/3 Pages) Microsemi Corporation – SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/742 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using
an internal “Category III” metallurgical bond. These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807CB thru 1N5811CB).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “E”
or D-5B
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the JEDEC
registered 1N5807 to 1N5811 series
• Voidless-hermetically-sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category III” Metallurgical bonds
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
• Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
• Axial-leaded equivalents also available (see separate data
sheet for 1N5807CB thru 1N5811CB)
• Ultrafast recovery 6 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Operating Temperature: -65^oC to +175^oC.
• Storage Temperature: -65^oC to +175^oC.
• Average Rectified Forward Current (I_O): 6 Amps @ T_EC
= 75ºC End Cap temperature (see note 1)
• Thermal Resistance: 6.5 ºC/W junction to end cap
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Capacitance: 60 pF at 10 volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• Tape & Reel option: Standard per EIA-481-B
• Weight: 539 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V_RWM
VOLTS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V_BR
VOLTS
AVERAGE
RECTIFIED
CURRENT
I_O1
@T_EC=75ºC
(Note 1)
AMPS
1N5807CBUS
50
60
6.0
AVERAGE
RECTIFIED
CURRENT
I_O2
@T_A=55ºC
(Note 2)
AMPS
3.0
MAXIMUM
FORWARD
VOLTAGE
@4A
(8.3 ms pulse)
V_F
REVERSE
CURRENT
(MAX)
@ V_RWM
I_R
VOLTS
μA
25^oC 100^oC 25^oC 125^oC
0.875 0.800 5 525
SURGE
CURRENT
(MAX)
I_FSM
(NOTE 3)
AMPS
125
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t_rr
ns
30
1N5809CBUS
100
110
6.0
3.0
0.875 0.800 5 525
125
30
1N5811CBUS
150
160
6.0
3.0
0.875 0.800 5 525
125
30
NOTE 1: Rated at T_EC = 75ºC. Derate at 60 mA/ºC for T_EC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above T_A = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T_J(max) does not exceed 175ºC
NOTE 3: T_A = 25^oC @ I_O = 3.0 A and V_RWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I_F = 1.0 A, I_RM = 1.0 A, I_R(REC) = 0.10 A and di/dt = 100 A/µs min
Copyright © 2007
7-26-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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