1N5807CB Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5807CB thru 1N5811CB
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts
are hermetically sealed with voidless-glass construction using an internal “Category III”
metallurgical bond. These devices are also available in surface mount MELF package
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including standard, fast
and ultrafast device types in both through-hole and surface mount packages.
APPEARANCE
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5807 to 1N5811 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category III” Metallurgical bonds
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
• Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
• Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate data
sheet for 1N5807CBUS thru 1N5811CBUS)
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +175^oC
• Storage Temperature: -65^oC to +175^oC
• Average Rectified Forward Current (I_O): 6 A @ T_L = 75ºC
at 3/8 inch lead length (see note 1)
• Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Capacitance: 60 pF at 10 volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• Ultrafast recovery 6 Amp rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper.
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 750 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN AVERAGE AVERAGE
MAXIMUM
REVERSE
SURGE
REVERSE
PEAK
VOLTAGE RECTIFIED RECTIFIED
FORWARD
CURRENT CURRENT RECOVERY
TYPE
REVERSE
VOLTAGE
V_RWM
(MIN.)
@ 100μA
V_BR
CURRENT
I_O1
@T_L=75ºC
(Note 1)
CURRENT
I_O2
@T_A=55ºC
Note 2
VOLTAGE
@4A
(8.3 ms pulse)
V_F
(MAX)
@ V_RWM
I_R
(MAX)
I_FSM
(NOTE 3)
TIME (MAX)
(NOTE 4)
t_rr
VOLTS
VOLTS
AMPS
VOLTS
μA
AMPS
ns
25^oC 100^oC 25^oC 125^oC
1N5807CB
50
60
6.0
3.0
0.875 0.800 5 525
125
30
1N5809CB 100
110
6.0
3.0
0.875 0.800 5 525
125
30
1N5811CB 150
160
6.0
3.0
0.875 0.800 5 525
125
30
NOTE 1: Rated at T_L = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for T_L above 75ºC.
NOTE 2: Derate linearly at 25 mA/ºC above T_A = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T_J(max) does not exceed 175ºC
NOTE 3: T_A = 25^oC @ I_O = 3.0 A and V_RWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I_F = 1.0 A, I_RM = 1.0 A, I_R(REC) = 0.10 A and di/dt = 100 A/µs min
Copyright © 2008
2-25-2008 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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