1N5802_07 Datasheet, PDF (1/2 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
DESCRIPTION
These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477
and are ideal for high-reliability applications where a failure cannot be tolerated. These
industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to
150 volts are hermetically sealed with voidless-glass construction using an internal
“Category I” metallurgical bond. They are also available in surface-mount packages (see
separate data sheet for 1N5802US thru 1N5806US). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various recovery
time speed requirements including standard, fast and ultrafast in thru-hole and surface-
mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
“A” Package
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
• Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +175^oC
• Storage Temperature: -65^oC to +175^oC
• Average Rectified Forward Current (I_O): 2.5 A @ T_L = 75ºC
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ V_R = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
• TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper. Note: Previous JANS inventory had
solid Silver axial-leads and no finish.
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 340 mg
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V_RWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V_BR
AVERAGE
RECTIFIED
CURRENT
I_O1 @
T_L=+75ºC
(NOTE 1)
AVERAGE
RECTIFIED
CURRENT
I_O2 @
T_A=+55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@1A
(8.3 ms pulse)
V_F
REVERSE
CURRENT
(MAX)
@ V_RWM
I_R
SURGE
CURRENT
(MAX)
I_FSM
(NOTE 3)
VOLTS
VOLTS
AMPS
AMPS
VOLTS
μA
25^oC 100^oC 25^oC 100^oC
AMPS
1N5802
50
55
1N5803
75
80
1N5804
100
110
2.5
1.0
0.875 0.800 1
50
35
2.5
1.0
1
50
35
2.5
1.0
0.875 0.800 1
50
35
1N5805
125
135
1N5806
150
160
2.5
1.0
1
50
35
2.5
1.0
0.875 0.800 1
50
35
NOTE 1: I_O1 is rated at 2.5 A @ T_L = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for T_L above 75ºC.
NOTE 2: I_O2 is rated at 1.0 A @ T_A = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T_J(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for T_A above 55ºC.
NOTE 3: T_A = 25^oC @ I_O = 1.0 A and V_RWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I_F = 0.5 A, I_RM = 0.5 A, I_R(REC) = .05 A
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t_rr
ns
25
25
25
25
25
Copyright © 2007
1-15-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
Page 1