1N5802US_09 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5802US thru 1N5806US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. They are also available in axial-
leaded package configurations for thru-hole mounting (see separate data sheet for
1N5802 thru 1N5806). Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and surface
mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “A”
or D-5A
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the JEDEC
registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
• Axial-leaded equivalents available (see 1N5802 thru 1N5806)
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +175^oC
• Storage Temperature: -65^oC to +175^oC
• Average Rectified Forward Current (I_O): 2.5 A @ T_EC = 75ºC
• Thermal Resistance: 13 ºC/W junction to end cap
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ V_R = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING and POLARITY: Cathode band only
• Tape & Reel option: Standard per EIA-481-B
• Weight: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN AVERAGE AVERAGE MAXIMUM
REVERSE
SURGE
PEAK
VOLTAGE RECTIFIED RECTIFIED FORWARD
CURRENT CURRENT
TYPE
REVERSE
VOLTAGE
V_RWM
(MIN.)
@ 100μA
V_BR
CURRENT
I_O1 @
T_EC=+75ºC
(NOTE 1)
CURRENT
I_O2 @
T_A=+55ºC
(Note 2)
VOLTAGE
@1A
(8.3 ms pulse)
V_F
(MAX)
@ V_RWM
I_R
(MAX)
I_FSM
(NOTE 3)
VOLTS
VOLTS
AMPS
AMPS
VOLTS
μA
25^oC 100^oC 25^oC 125^oC
AMPS
1N5802US
50
55
2.5
1.0
0.875 0.800 1 175
35
1N5803US
75
80
2.5
1.0
1 175
35
1N5804US 100
110
2.5
1.0
0.875 0.800 1 175
35
1N5805US 125
135
2.5
1.0
1 175
35
1N5806US 150
160
2.5
1.0
0.875 0.800 1 175
35
NOTE 1: I_O1 is rated at 2.5 A @ T_EC = 75º. Derate at 50 mA/ºC for T_EC above 125ºC.
NOTE 2: I_O2 is rated at 1.0 A @ T_A = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T_J(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for T_A above 55ºC.
NOTE 3: T_A = 25^oC @ I_O = 1.0 A and V_RWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I_F = 0.5 A, I_RM = 0.5 A, I_R(REC) = .05 A
Copyright © 2009
10-06-2009 REV C; SD41A.pdf
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t_rr
ns
25
25
25
25
25
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