1N5802 Datasheet, PDF (1/2 Pages) Microsemi Corporation – MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP

SCOTTSDALE DIVISION
1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
DESCRIPTION
APPEARANCE
This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-
19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak
reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. They are also
available in surface-mount packages (see separate data sheet for 1N5802US thru
1N5806US). Microsemi also offers numerous other rectifier products to meet higher
and lower current ratings with various recovery time speed requirements including
standard, fast and ultrafast in both through-hole and surface-mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
“A” Package
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
• Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
MAXIMUM RATINGS
• Junction Temperature: -65^oC to +175^oC
• Storage Temperature: -65^oC to +175^oC
• Average Rectified Forward Current (I_O): 2.5 A @ T_L = 75ºC
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ V_R = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 340 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V_RWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100µA
V_BR
AVERAGE
RECTIFIED
CURRENT
I_O1 @
T_L=+75ºC
(NOTE 1)
AVERAGE
RECTIFIED
CURRENT
I_O2 @
T_A=+55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@1A
(8.3 ms pulse)
V_F
REVERSE
CURRENT
(MAX)
@ V_RWM
I_R
SURGE
CURRENT
(MAX)
I_FSM
(NOTE 3)
VOLTS
VOLTS
AMPS
AMPS
VOLTS
µA
25^oC 100^oC 25^oC 100^oC
AMPS
1N5802
50
55
1N5803
75
80
1N5804
100
110
1N5805
125
135
1N5806
150
160
2.5
1.0
0.875 0.800 1
50
35
2.5
1.0
1
50
35
2.5
1.0
0.875 0.800 1
50
35
2.5
1.0
1
50
35
2.5
1.0
0.875 0.800 1
50
35
NOTE 1: I_O1 is rated at 2.5 A @ T_L = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for T_L above 75ºC.
NOTE 2: I_O2 is rated at 1.0 A @ T_A = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T_J(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for T_A above 55ºC.
NOTE 3: T_A = 25^oC @ I_O = 1.0 A and V_RWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I_F = 0.5 A, I_RM = 0.5 A, I_R(REC) = .05 A
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t_rr
ns
25
25
25
25
25
Copyright  2004
7-16-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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