1N5711UB Datasheet, PDF (1/2 Pages) Microsemi Corporation – SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
DEVICES
1N5711UB
1N5712UB
SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
Qualified per MIL-PRF-19500/444
1N5711UBCA 1N5711UBCC 1N5711UBD
1N5712UBCA 1N5712UBCC 1N5712UBD
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
Operating Current:
Derating:
-65°C to +150°C
-65°C to +150°C
5711 types
5712 types
all types
:33mA dc @ T_SP = +140°C
:75mA dc @ T_SP = +130°C
:Derate to 0 (zero) mA dc @ +150°C
QUALIFIED LEVELS
JAN
JANTX
JANTXV
JANS
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
1N5711
1N5712
MINIMUM
BEAKDOWN
VOLTAAGE
V_BR @ 10μA
VOLTS
70
20
MAXIMUM
FORWARD
VOLTAGE
V_F @ 1mA
VOLTS
0.41
0.41
MAXIMUM
FORWARD
VOLTAGE
V_F @ I_F
VOLTS
@ mA
1.0 @ 15
1.0 @ 35
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I_R @ V_R
MAXIMUM
CAPACITANCE
@
V_R = 0 VOLTS
f = 1.0MHz
C_T
nA VOLTS PICO FARADS
200
50
2.0
150
16
2.0
ESDS
CLASS
1
1
NOTE:
1. Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
3 PIN
T4-LDS-0174 Rev. 2 (110311)
Page 1 of 2